CT2321-R3 Datasheet (CT Micro)

CT2321-R3, P-Channel MOSFET

The CT2321-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .

Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Oct, 2014 CT2321

CT2321-R3 Features

* Drain-Source Breakdown Voltage VDSS - 20 V

* Drain-Source On-Resistance RDS(ON) 42mΩ, at VGS= - 4.5V, IDS= - 3.8A RDS(ON) 57mΩ, at VGS= - 2.5V, IDS= - 3.0A ℃

* Continuous Drain Current at TA=25 ID = - 3.8A

* Advanced high cell density Trench Technology

* RoHS