CT2301-R3 Datasheet (CT Micro)

CT2301-R3, P-Channel MOSFET

The CT2301-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .

Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 4

CT2301-R3 Features

* Drain-Source Breakdown Voltage VDSS - 20 V

* Drain-Source On-Resistance RDS(ON) 85mΩ, at VGS= - 4.5V, IDS= - 3.0A RDS(ON) 100mΩ, at VGS= - 2.5V, IDS= - 2.0A ℃

* Continuous Drain Current at TA=25 ID = - 3.0A

* Advanced high cell density Trench Technology

* RoH