CT2306-R3 Datasheet (CT Micro)

CT2306-R3, N-Channel MOSFET

The CT2306-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications.

Applications * Power Management * DC-DC Converter * Load Switch Package Outline Schematic Drai

CT2306-R3 Features

* Drain-Source Breakdown Voltage VDSS 30 V

* Drain-Source On-Resistance

* RDS(ON) 25mΩ, at VGS= 10V, ID=4.0A RDS(ON) 36mΩ, at VGS= 4.5V, ID= 3.5A ℃

* Continuous Drain Current at TA=25 ID = 4.7A

* Advanced high cell density Trench Technology

* RoHS Compl