CT20ASJ-8 Datasheet (Mitsubishi Electric Semiconductor)

CT20ASJ-8, IGBT

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20ASJ-8 STROBE FLASHER USE CT20ASJ-8 OUTLINE DRAWING 1.5 ± 0.2 6.5 5.0 ± 0.2 4 Dimensions in mm 0.5 ± 0.1 5.5 ± 0.2 1.0MAX.

1.0 0.9MAX.

2.3MIN.

10MAX.

0.5 ± 0.2 2.3 2.3 0.8 2.3 1 2 3 wr q GATE w COLLECTOR e EMITTER r COLLECTOR e q ¡VCES 400V ¡ICM 130A ¡Drive Voltage VGE=4V ¡Small Package MP-3 MP-3 APPLICATION Strobe Flasher.

MAXIMUM RATINGS Symbol VCES VGES VGEM ICM Tj Tstg (Tc = 25°C) Parameter Collector-emitter voltage Gate-