CS4N90FA9HD - Silicon N-Channel Power MOSFET

CR Micro

CS4N90FA9HD Datasheet Preview — Preview of CS4N90FA9HD PDF

Datasheet Details

Part number	CS4N90FA9HD
Manufacturer	CR Micro
File Size	535.35 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS4N90FA9HD-CRMicro.pdf

CS4N90FA9HD Product details

Description

VDSS 900 CS4N90F A9HD, the silicon N-channel Enhanced ID 4 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 35 which reduce the conduction loss, improve switching RDS(ON)Typ 2.6 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

Fast Switching.
Low ON Resistance(Rdson≤3Ω).
Low Gate Charge (Typical Data:25.2nC).
Low Reverse transfer capacitances(Typical:7.4pF).
100% Single Pulse avalanche energy Test.

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Published: Dec 19, 2024 |