CS4N80A3HD1-G Datasheet (CR Micro) - Silicon N-Channel Power MOSFET

CS4N80A3HD1-G, Silicon N-Channel Power MOSFET

CS4N80 A3HD1-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturizatio

CS4N80A3HD1-G Features

* Fast Switching

* ESD Improved Capability

* Low Gate Charge (Typical Data: 25nC)

* Low Reverse transfer capacitances(Typical:7.5pF)

* 100% Single Pulse avalanche energy Test

* Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ un