CS4N60A4TDY Datasheet (Huajing Microelectronics) - Silicon N-Channel Power MOSFET

CS4N60A4TDY, Silicon N-Channel Power MOSFET

CS4N60 A4TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and hi

CS4N60A4TDY Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 13nC) l Low Reverse transfer capacitances(Typical: 2.2pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 600 V 4A 75 W 2.0 Ω Applications： Power switch circuit of adaptor and charger. Absolute（T