CS4N60A3TDY - Silicon N-Channel Power MOSFET

Name: CS4N60A3TDY
SKU: CS4N60A3TDY-1083193

Huajing Microelectronics

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Datasheet Details

Part number	CS4N60A3TDY
Manufacturer	Huajing Microelectronics
File Size	355.68 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS4N60A3TDY-HuajingMicroelectronics.pdf

CS4N60A3TDY Product details

Description

CS4N60 A3TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 13nC) l Low Reverse transfer capacitances(Typical: 2.2pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 600 V 4A 75 W 2.0 Ω.

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Published: Dec 6, 2016 |