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CSD16413Q5A - NexFET Power MOSFETs

Features

  • Ultra Low Qg & Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating G S S S D D D D S1 S2 S3 G4 D 8D 7D 6D 5D.
  • RoHS Compliant.
  • Halogen Free QFN 5mm x 6mm Plastic Package Top View Product Summary VDS Qg Qgd RDS(on) Vth 25 9.0 2.5 VGS=4.5V VGS=10V 1.6 4.1 3.1 V nC nC mΩ mΩ V Maximum Values (TA = 25oC unless otherwise stated) Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage Continuous.

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Datasheet Details

Part number CSD16413Q5A
Manufacturer CICLON
File Size 584.44 KB
Description NexFET Power MOSFETs
Datasheet download datasheet CSD16413Q5A Datasheet

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Full PDF Text Transcription

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N-Channel CICLON NexFET™ Power MOSFETs CSD16413Q5A Features • Ultra Low Qg & Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating G S S S D D D D S1 S2 S3 G4 D 8D 7D 6D 5D • RoHS Compliant • Halogen Free QFN 5mm x 6mm Plastic Package Top View Product Summary VDS Qg Qgd RDS(on) Vth 25 9.0 2.5 VGS=4.5V VGS=10V 1.6 4.1 3.1 V nC nC mΩ mΩ V Maximum Values (TA = 25oC unless otherwise stated) Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage Continuous Drain Current, TC = 25°C ID Continuous Drain Current1 IDM Pulsed Drain Current, TA = 25°C2 PD Power Dissipation1 TJ, TSTG Operating Junction and Storage Temperature Range EAS Avalanche Energy, single pulse ID =46A, L = 0.1mH, RG = 25Ω 1. Rθja = 410C/W on 1in2 Cu FR4 PCB. 2.
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