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CSD16403Q5A - N-Channel Power MOSFET

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Gate to Source Voltage V G006 PRODUCT SUMMA

Features

  • 1.
  • 2 Ultra Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5mm x 6mm Plastic Package.

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Full PDF Text Transcription

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CSD16403Q5A www.ti.com SLPS201A – AUGUST 2009 – REVISED SEPTEMBER 2010 N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16403Q5A RDS(on) − On-State Resistance − mΩ VG − Gate Voltage − V FEATURES 1 •2 Ultra Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5mm x 6mm Plastic Package APPLICATIONS • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems • Optimized for Control FET Applications DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
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