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CSD16409Q3 - NexFET Power MOSFETs

Features

  • Ultra Low Qg & Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating G S S S D D D D S1 S2 S3 G4 D 8D 7D 6D 5D.
  • RoHS Compliant.
  • Halogen Free QFN 3.3mm x 3.3mm Plastic Package Top View Product Summary VDS Qg Qgd RDS(on) Vth 25 4.0 1.0 VGS=4.5V VGS=10V 2.0 9.5 6.2 V nC nC mΩ mΩ V Maximum Values (TA=25oC unless otherwise stated) Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Continuou.

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Datasheet Details

Part number CSD16409Q3
Manufacturer CICLON
File Size 541.11 KB
Description NexFET Power MOSFETs
Datasheet download datasheet CSD16409Q3 Datasheet

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Full PDF Text Transcription

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N-Channel CICLON NexFET™ Power MOSFETs CSD16409Q3 Features • Ultra Low Qg & Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating G S S S D D D D S1 S2 S3 G4 D 8D 7D 6D 5D • RoHS Compliant • Halogen Free QFN 3.3mm x 3.3mm Plastic Package Top View Product Summary VDS Qg Qgd RDS(on) Vth 25 4.0 1.0 VGS=4.5V VGS=10V 2.0 9.5 6.2 V nC nC mΩ mΩ V Maximum Values (TA=25oC unless otherwise stated) Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Continuous Drain Current, TC = 25°C ID Continuous Drain Current1 IDM PD TJ, TSTG EAS Pulsed Drain Current, TA = 25°C2 Power Dissipation1 Operating Junction and Storage Temperature Range Avalanche Energy, single pulse ID =38A, L = 0.
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