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N-Channel
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CSD16321Q5
Features
Optimized for 5V gate drive Ultra Low Qg & Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant
CICLON NexFET™ Power MOSFETs
Product Summary
VDS 25 14 2.5 VGS = 3.0V RDS(on) Vth VGS = 4.5V VGS = 8.0V 1.1 2.8 2.1 1.9 V nC nC m m m V
G S S S
D D D D
S 1 S 2 S 3 G 4 D
8 D 7 D 6 D 5 D
Qg Qgd
QFN 5mm x 6mm Plastic Package
Top View
Maximum Values (TA = 25oC unless otherwise stated)
Symbol
VDS VGS ID Drain to Source Voltage Gate to Source Voltage Continuous Drain Current, TC = 25°C Continuous Drain Current1 IDM PD TJ, TSTG EAS 1. 2. Pulsed Drain Current, TA = 25°C2 Power Dissipation1 Operating Junction and Storage Temperature Range Avalanche Energy, single pulse ID =66A, L = 0.
CSD16321Q5 Datasheet
