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CEG2288
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 6.2A, RDS(ON) = 24mΩ @VGS = 4.5V. RDS(ON) = 34mΩ @VGS = 2.5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability. Lead free product is acquired. TSSOP-8 Package.
G2 S2 S2 D
TSSOP-8
G1 S1 S1 D
D1 S1 2 S1 3 G1 4
8D 7 S2 6 S2 5 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS 20
VGS ±12
ID 6.2 IDM 25
Maximum Power Dissipation
PD 1.
CEG2288 Datasheet
