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CEG2287 - Dual P-Channel MOSFET

Key Features

  • -20V, -4.7A, RDS(ON) = 30mΩ @VGS = -10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package. G2 S2 S2 D2 TSSOP-8 G1 S1 S1 D1 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 6 S2 5 G2.

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Datasheet Details

Part number CEG2287
Manufacturer CET
File Size 259.20 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet CEG2287 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEG2287 Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -4.7A, RDS(ON) = 30mΩ @VGS = -10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package. G2 S2 S2 D2 TSSOP-8 G1 S1 S1 D1 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 6 S2 5 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS -20 VGS ±12 ID -4.7 IDM -18 Maximum Power Dissipation PD 1.