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CEG8304 - Dual P-Channel MOSFET

Key Features

  • -30V, -3.6A, RDS(ON) = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package. D1 1 S1 2 S1 3 G1 4 G2 S2 S2 D TSSOP-8 G1 S1 S1 D 8 D2 7 S2 6 S2 5 G2.

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Datasheet Details

Part number CEG8304
Manufacturer CET
File Size 353.25 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet CEG8304 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEG8304 Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -3.6A, RDS(ON) = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package. D1 1 S1 2 S1 3 G1 4 G2 S2 S2 D TSSOP-8 G1 S1 S1 D 8 D2 7 S2 6 S2 5 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID -3.6 IDM -14 Maximum Power Dissipation PD 1.