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CEG2108E - Dual N-Channel MOSFET

Key Features

  • 20V, 8.5A, RDS(ON) = 14mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. RDS(ON) = 28mΩ @VGS = 1.8V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TSSOP-8 for Surface Mount Package. G2 S2 S2 D TSSOP-8 G1 S1 S1 D D.
  • 1K G1.
  • 1K G2 S1.
  • Typical value by design D1 S1 2 S1 3 G1 4.

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Datasheet Details

Part number CEG2108E
Manufacturer CET
File Size 409.93 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet CEG2108E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEG2108E Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 8.5A, RDS(ON) = 14mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. RDS(ON) = 28mΩ @VGS = 1.8V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TSSOP-8 for Surface Mount Package. G2 S2 S2 D TSSOP-8 G1 S1 S1 D D *1K G1 *1K G2 S1 *Typical value by design D1 S1 2 S1 3 G1 4 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID 8.5 IDM 34 Maximum Power Dissipation PD 1.