NE677M04 NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

CEL

Description

www.DataSheet4U.com NEC's MEDIUM POWER NPN SILICON HIGH FREQUENCY NE677M04 TRANSISTOR .
NEC's NE677M04 is fabricated using NEC's HFT3 wafer process.

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Datasheet Specifications

Part number: NE677M04
Manufacturer: CEL
File Size: 89.90 KB
Datasheet: NE677M04_CEL.pdf
Description: NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

Features

* HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH OUTPUT POWER: P-1dB = 15 dBm at 1.8 GHz HIGH LINEAR GAIN: GL = 15.5 dB at 1.8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 +0.30

Applications

* from 100 MHz to 3 GHz. The NE677M04 provides P1dB of 15 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications. NEC's NE677M04 is housed in NEC's new low profile/flat lead style "M04" package 1 +0.30-0.05 (l

NE677M04 Distributors

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NE677M04 NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR CEL

CEL NE677M04-like datasheet