NE678M04 MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC

Description

www.DataSheet4U.com MEDIUM POWER NPN SILICON NE678M04 HIGH FREQUENCY TRANSISTOR .
The NE678M04 is fabricated using NEC's HFT3 wafer process.

📥 Download Datasheet

NE678M04 Datasheet Preview — Preview of NE678M04 PDF

Datasheet Specifications

Part number: NE678M04
Manufacturer: NEC
File Size: 89.36 KB
Datasheet: NE678M04_NEC.pdf
Description: MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

Features

* HIGH GAIN BANDWIDTH: fT = 12 GHz HIGH OUTPUT POWER: P-1dB = 18 dBm at 1.8 GHz HIGH LINEAR GAIN: GL = 13 dB at 1.8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 +0.30

Applications

* from 100 MHz to 3 GHz. The NE678M04 provides P1dB of 18 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications. The NE678M04 is housed in NEC's new low profile/flat lead style "M04" package 1 +0.30-0.05 (lea

NE678M04 Distributors

📁 Related Datasheet

NE67400 NE67483B NE677M04 NE600 NE602 NE602A

📌 All Tags

NE678M04 MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR NEC

NEC NE678M04-like datasheet