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BF96N60 - N-Channel MOSFET

BYD

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Datasheet Details

Part number	BF96N60
Manufacturer	BYD
File Size	255.96 KB
Description	N-Channel MOSFET
Datasheet	BF96N60-BYD.pdf

BF96N60 Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.

Features

z VDS =600 V z ID =5.5A z RDS(ON) =1.7 Ω TYP(VGS=10V,ID=2.75A) z CRSS (typical 7.0pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) (Note1) VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy (Note2) IAR Avalanche Current (Note1) EAR Repetitive Avalanche Energy (Note1) dv/dt Peak Diode Recovery dv/dt.

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Published: Apr 12, 2017 |