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BF960NF06T - N-Channel MOSFET

BYD

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Datasheet Details

Part number	BF960NF06T
Manufacturer	BYD
File Size	201.94 KB
Description	N-Channel MOSFET
Datasheet	BF960NF06T-BYD.pdf

BF960NF06T Product details

Description

This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge.

Features

z VDS =60 V z ID =60A z Typical RDS(ON) =10m Ω (VGS=10V,ID=30A) z Fast switching z 100% avalanche tested z Improved dv/dt capability TO-252 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy IAR Avalanche Current PD Power Dissipation (TC = 25°C) TJ,Tstg Operating junction and Storage Temperature Range TL Maximum Lead Temperature for Soldering Pur.

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Published: Apr 12, 2017 |