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BF95N50T - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using VDMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • z VDS =500 V z ID=5A z RDS(ON)≤1.60Ω TYP(VGS=10V,ID=2.5A) z Low CRSS (typical 7.8 pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) VGS Gate-Source Voltage IAR Avalanche Current EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt PD Power Dissipation (TC = 25°C).

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Datasheet Details

Part number BF95N50T
Manufacturer BYD
File Size 209.02 KB
Description N-Channel MOSFET
Datasheet download datasheet BF95N50T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BYD Microelectronics Co., Ltd. BF95N50T/BF95N50L 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using VDMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features z VDS =500 V z ID=5A z RDS(ON)≤1.60Ω TYP(VGS=10V,ID=2.5A) z Low CRSS (typical 7.
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