Datasheet4U Logo Datasheet4U.com

BF94N60 - N-Channel MOSFET

BF94N60 Description

BYD Microelectronics Co., Ltd.BF94N60/BF94N60L 600V N-Channel MOSFET General .
The N-Channel enhancement mode power field effect transistor is produced using DMOS technology.

BF94N60 Features

* z VDS =600 V z ID =4A z RDS(ON) =1.9 Ω TYP(VGS=10V ,ID=2A) z Low CRSS (typical 7.0pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) (Note1) VGS Gate-Source Voltage EAS SinglePulseAvalanche

📥 Download Datasheet

Preview of BF94N60 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
BF94N60
Manufacturer
BYD
File Size
256.24 KB
Datasheet
BF94N60-BYD.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • BF900 - Sicherungshalter (Inter Control)
  • BF901 - Silicon n-channel dual gate MOS-FETs (NXP)
  • BF901R - Silicon n-channel dual gate MOS-FETs (NXP)
  • BF904 - N-channel dual gate MOS-FETs (NXP)
  • BF904A - N-channel dual gate MOS-FETs (NXP)
  • BF904AR - N-channel dual gate MOS-FETs (NXP)
  • BF904AWR - N-channel dual gate MOS-FETs (NXP)
  • BF904R - N-channel dual gate MOS-FETs (NXP)

📌 All Tags

N-Channel MOSFET BYD
BYD BF94N60-like datasheet