BLA6G1011-200R Datasheet (Ampleon) - Power LDMOS transistor

BLA6G1011-200R, Power LDMOS transistor

200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.

Table 1.

Test information Typical RF performance at Tcase = 25 C.

Test signal f (MHz) VDS PL Gp D tr (V) (W) (dB) (%) (ns) Typical RF performance in a class-AB production test circuit for SOT

BLA6G1011-200R Features

* Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply voltage of 28 V and an IDq of 100 mA:

* Output power = 200 W

* Power gain = 20 dB

* Efficiency = 65 %

* Easy power control

* Integrated ESD protection

* Enhanced ruggedness

* High effic