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BLA1011S-200 - Avionics LDMOS transistor

Download the BLA1011S-200 datasheet PDF. This datasheet also covers the BLA1011-200 variant, as both devices belong to the same avionics ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

Description

200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz.

Table 1: Typical performance RF performance at Th = 25 °C in a common source class-AB test circuit; IDq = 150 mA; typical values.

Features

  • s Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz, a supply voltage of 36 V and an IDq of 150 mA: x Load power ≥ 200 W x Gain ≥ 13 dB x Efficiency ≥ 45 % x Rise time ≤ 50 ns x Fall time ≤ 50 ns s High power gain s Easy power control s Excellent ruggedness s Source on mounting flange eliminates DC isolators, reducing common mode inductance 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLA1011-200_PhilipsSemiconductors.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by NXP Semiconductors

Part Number Description
BLA1011-10 Avionics LDMOS transistor
BLA1011-2 Avionics LDMOS transistor
BLA1011-200 Avionics LDMOS transistor
BLA1011-300 Avionics LDMOS transistors
BLA0912-250 Avionics LDMOS transistor

Full PDF Text Transcription

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www.DataSheet4U.com BLA1011-200; BLA1011S-200 Avionics LDMOS transistor Rev. 08 — 26 October 2005 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1: Typical performance RF performance at Th = 25 °C in a common source class-AB test circuit; IDq = 150 mA; typical values. Mode of operation Pulsed class-AB: 1030 MHz to 1090 MHz Conditions tp = 50 µs; δ = 2 % tp = 128 µs; δ = 2 % tp = 340 µs; δ = 1 % CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. VDS (V) 36 36 36 PL (W) 200 250 250 Gp (dB) 15 14 14 ηD (%) 50 50 50 tr (ns) 35 35 35 tf (ns) 6 6 6 1.
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