BLA6H1011-600 Datasheet (Ampleon) - LDMOS avionics power transistor

BLA6H1011-600, LDMOS avionics power transistor

600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range.

Table 1.

Test information Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 100 mA; in a class-AB production test circuit.

Mode of operation f (MHz) VDS PL Gp D tr

BLA6H1011-600 Features

* Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply voltage of 48 V, an IDq of 100 mA, a tp of 50 s with  of 2 %:

* Output power = 600 W

* Power gain = 17 dB

* Efficiency = 52 %

* Easy power control

* Integrated ESD protection

* High flexibi