AOD609G Complementary Enhancement Mode Field Effect Transistor

Alpha & Omega Semiconductors

Description

AOD609G Complementary Enhancement Mode Field Effect Transistor General .
The AOD609G uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

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Datasheet Specifications

Part number: AOD609G
Manufacturer: Alpha & Omega Semiconductors
File Size: 524.23 KB
Datasheet: AOD609G-AlphaOmegaSemiconductors.pdf
Description: Complementary Enhancement Mode Field Effect Transistor

Features

* n-channel VDS (V) = 40V, ID = 12A (VGS=10V) RDS(ON)< 30mW (VGS=10V) RDS(ON)< 40mW (VGS=4.5V) p-channel VDS (V) = -40V, ID = -12A (VGS=-10V) RDS(ON)< 45mW (VGS= -10V) RDS(ON)< 66mW (VGS= -4.5V) 100% UIS Tested! 100% Rg Tested! Top View TO-252-4L D-PAK D1/D2 Bottom View Top View Drain Connected to

Applications

* -RoHS Compliant -Halogen Free

AOD609G Distributors

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AOD609G Complementary Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors

Alpha & Omega Semiconductors AOD609G-like datasheet