Description
8Gb: x4, x8, x16 DDR3L SDRAM .
Revision History 8Gb: x4, x8, x16 DDR3L SDRAM AS4C2GM4D3L.
256 Meg x 4 x 8 banks.
AS4C1G8MD3L.
128 Meg x 8 x 8 banks AS4C512M16D3.
Features
* VDD = VDDQ = 1.35V (1.283
* 1.45V)
* Backward compatible to VDD = VDDQ = 1.5V ±0.075V
Applications
* Differential bidirectional data strobe
* 8n-bit prefetch architecture
* Differential clock inputs (CK, CK#)
* 8 internal banks
* Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
* Programmable CAS (READ) latency (CL)
