AS4C14400 - (AS4C14400 / AS4C14405) 1M-bit x 4 CMOS DRAM (Fast page mode or EDO)

Alliance Semiconductor

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Datasheet Details

Part number	AS4C14400
Manufacturer	Alliance Semiconductor
File Size	398.47 KB
Description	(AS4C14400 / AS4C14405) 1M-bit x 4 CMOS DRAM (Fast page mode or EDO)
Datasheet	AS4C14400_AllianceSemiconductor.pdf

AS4C14400 Product details

Description

26 25 24 23 22 GND I/O3 I/O2 CAS OE I/O0 I/O1 WE RAS A9 1 2 3 4 5 26 25 24 23 22 GND I/O3 I/O2 CAS OE Address inputs Input/output Row address strobe Output enable I/O0 to I/O3 CAS WE VCC 18 17 16 15 14 A8 A7 A6 A5 A4 A0 A1 A2 A3 VCC 9 10 11 12 13 18 17 16 15 14 A8 A7 A6 A5 A4 Column address strobe Read/write control Power (5.0 ± 0.5V) GND Ground Symbol tRAC tCAA tCAC 4C14400-40 40 20 10 10 70 30 90 4C14400-50 50 25 13 13 90 35 80 4C14400-60 60 30 15 15 40 70 4C14400-70 70

Features

Organization: 1,048,576 words × 4 bits.
High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time.
1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh.
Low power consumption - Active: 385 mW max (-60) - Standby: 5.5 mW max, CMOS I/O.
Fast page mode (AS4C14400) or EDO (AS4C14405) Pin arrangement SOJ I/O0 I/O1 WE RAS A9 1 2 3 4 5 A0 A1 A2 A3 VCC 9 10 11 1.

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Other Datasheets by Alliance Semiconductor

AS4C14405 - (AS4C14400 / AS4C14405) 1M-bit x 4 CMOS DRAM (Fast page mode or EDO)
AS4C128M16D2A-25BCN - 2Gb DDR2
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AS4C128M16D3C-93BCN - 128M x 16 bit DDR3 Synchronous DRAM

Published: Mar 5, 2006 |