Datasheet4U Logo Datasheet4U.com

AP6680BGM-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP6680BGM-HF Description

AP6680BGM-HF Halogen-Free Product Advanced Power Electronics Corp.▼ Lower Gate Charge ▼ Simple Drive Requirement D D D D N-CHANNEL ENHANCEMENT MODE.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.

AP6680BGM-HF Applications

* and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 +20

📥 Download Datasheet

Preview of AP6680BGM-HF PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • AP6682 - Quad-band G850/G900/DCS1800/PCS1900 GPRS Front-end Module (Airoha Technology)
  • AP6684 - Quad-band GPRS Front-end Module (AIROHA)
  • AP66200 - 2A LOW IQ SYNCHRONOUS BUCK CONVERTER (DIODES)
  • AP66200Q - 2A LOW IQ SYNCHRONOUS BUCK CONVERTER (DIODES)
  • AP66300 - 3A LOW IQ SYNCHRONOUS BUCK CONVERTER (DIODES)
  • AP66300Q - 3A LOW IQ SYNCHRONOUS BUCK CONVERTER (DIODES)
  • AP6679BGM - P-Channel 30V MOSFET (VBsemi)
  • AP6000 - TRANSFORMERS (apx)

📌 All Tags

N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics AP6680BGM-HF-like datasheet