AP110N03D 30V N-Channel Enhancement Mode MOSFET

APM

Description

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The AP110N03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

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Datasheet Specifications

Part number: AP110N03D
Manufacturer: APM
File Size: 1.96 MB
Datasheet: AP110N03D-APM.pdf
Description: 30V N-Channel Enhancement Mode MOSFET

Applications

* , should be limited by total power dissipation. 2 AP110N03D Rve3.9 ID Drain Current (A) Typical Characteristics 210 180 150 120 90 60 30 VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V RDSON (mΩ) AP110N03D 30V N-Channel Enhancement Mode MOSFET 6.0 ID=12A 5.0 4.0 3.0 0 0 0.3 0.6 0.9 1.2 1.5 VD

AP110N03D Distributors

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AP110N03D 30V N-Channel Enhancement Mode MOSFET APM

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