AP100N10NF
Description
100V N-Channel Enhancement Mode MOSFET
The AP100N10NF uses advanced APM-SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = 100V ID =100A RDS(ON) < 5.5mΩ @ VGS=10V （Type：4.3mΩ）
Application
BLDC
LED Backlighting
Package Marking and Ordering Information
Product ID
Pack
Marking
PDFN5- 6-8L
AP100N10NF XXX YYYY
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
ID@TC=100℃ IDM EAS IAS
PD@TC=25℃ TJ TSTG RθJA RθJC
Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current
Single Pulsed Avalanche Energy Avalanche Current Power Dissipation
Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance, Junction to...
