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SSC8029GN2 - P-Channel Enhancement Mode MOSFET

SSC8029GN2 Description

SSC8029GN2 P-Channel Enhancement Mode MOSFET * .
This device is produced with high cell density DMOS trench technology, Uses advanced trench technology and design to provide excellent RDS (ON) with l.

SSC8029GN2 Features

* VDS -20V VGS ±12V RDSon TYP 21mR@-4V5 26mR@-2V5 35mR@-1V8 45mR@-1V5 ID -6.5A

SSC8029GN2 Applications

* Load Switch
* Portable Devices
* DCDC conversion
* Charging
* Driver for Relay,Solenoid,Motor,LED etc.

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Datasheet Details

Part number
SSC8029GN2
Manufacturer
AFSEMI
File Size
605.65 KB
Datasheet
SSC8029GN2-AFSEMI.pdf
Description
P-Channel Enhancement Mode MOSFET

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P-Channel Enhancement Mode MOSFET AFSEMI
AFSEMI SSC8029GN2-like datasheet