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SSC8022GS6 N-Channel Enhancement Mode MOSFET

SSC8022GS6 Description

SSC8022GS6 N-Channel Enhancement Mode MOSFET * .
Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.

SSC8022GS6 Features

* VDS 20V VGS ±12V RDSon TYP 35mR@4V5 45mR@2V5 ID 3.5A

SSC8022GS6 Applications

* Load Switch
* Portable Devices
* DCDC conversion
* Pin configuration

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Datasheet Details

Part number
SSC8022GS6
Manufacturer
AFSEMI
File Size
252.61 KB
Datasheet
SSC8022GS6-AFSEMI.pdf
Description
N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET AFSEMI
AFSEMI SSC8022GS6-like datasheet