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SSC8027GS6 P-Channel Enhancement Mode MOSFET

SSC8027GS6 Description

SSC8027GS6 P-Channel Enhancement Mode MOSFET * .
Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.

SSC8027GS6 Features

* VDS -20V VGS ±8V RDSon TYP 100mR@-4V5 119mR@-2V5 ID -2A

SSC8027GS6 Applications

* Load Switch
* Portable Devices
* DCDC conversion
* Pin Configuration

📥 Download Datasheet

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Datasheet Details

Part number
SSC8027GS6
Manufacturer
AFSEMI
File Size
222.52 KB
Datasheet
SSC8027GS6-AFSEMI.pdf
Description
P-Channel Enhancement Mode MOSFET

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📌 All Tags

P-Channel Enhancement Mode MOSFET AFSEMI
AFSEMI SSC8027GS6-like datasheet