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SSC8020GS9 - N-Channel Enhancement Mode MOSFET

Description

circuits, the tiny and thin outline saves PCB consumption.

Replace

Features

  • s.
  • VDS VGS RDSon TYP ID 240mR@4V5 280mR@2V5 20V ±8V 0.4A 410mR@1V8.
  • 450mR@1V5.
  • General.

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Datasheet Details

Part number SSC8020GS9
Manufacturer AFSEMI
File Size 120.69 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8020GS9 Datasheet

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Full PDF Text Transcription

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SSC8020GS9 N-Channel Enhancement Mode MOSFET  Features  VDS VGS RDSon TYP ID 240mR@4V5 280mR@2V5 20V ±8V 0.4A 410mR@1V8  450mR@1V5  General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. Applications  Replace Digital Transistor  Battery Operated Systems  Power Supply Converter Circuits  Load/Power Switching Cell Phones, Pagers Pin Configuration Top View  Package Information SSC-V1.0 http://www.afsemi.
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