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SSC8023GS6 P-Channel Enhancement Mode MOSFET

SSC8023GS6 Description

SSC8023GS6 P-Channel Enhancement Mode MOSFET * .
Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.

SSC8023GS6 Features

* VDS -20V VGS ±12V RDSon TYP 60mR@-4V5 75mR@-2V5 ID -3A

SSC8023GS6 Applications

* Load Switch
* Portable Devices
* DCDC conversion
* Pin configuration

📥 Download Datasheet

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Datasheet Details

Part number
SSC8023GS6
Manufacturer
AFSEMI
File Size
199.33 KB
Datasheet
SSC8023GS6-AFSEMI.pdf
Description
P-Channel Enhancement Mode MOSFET

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📌 All Tags

P-Channel Enhancement Mode MOSFET AFSEMI
AFSEMI SSC8023GS6-like datasheet