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PE6005 Datasheet Preview

PE6005 Datasheet

N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET
Description
The PE6005 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =60V,ID =5A
RDS(ON) < 45m@ VGS=10V
Typ38m
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
PE6005
D
G
S
Schematic diagram
SOT-223-3L view
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
60
±20
5
3.5
20
2
-55 To 150
Unit
V
V
A
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
62.5 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=60V,VGS=0V
Min Typ Max Unit
60 69
--
-
1
V
μA
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Page 1




semi one

PE6005 Datasheet Preview

PE6005 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=4.5A
VDS=5V,ID=4.5A
VDS=25V,VGS=0V,
F=1.0MHz
VDs=30V,ID=4.5A
VGS=10V,RGEN=3
VDS=30V,ID=4.5A,
VGS=10V
VGS=0V,IS=3.7A
PE6005
- - ±100 nA
1.2 1.8
38
11 -
2.5
45
-
V
m
S
450 PF
60 PF
25 PF
- 4.7
- 2.3
- 15.7
- 1.9
- 8.5
- 1.6
- 2.2
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - 1.2
--
5
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
WWW.SEMI-ONE.COM
Page 2


Part Number PE6005
Description N-Channel Enhancement Mode Power MOSFET
Maker semi one
Total Page 6 Pages
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