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PE6005 - N-Channel Enhancement Mode Power MOSFET

General Description

The PE6005 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =60V,ID =5A RDS(ON) < 45mΩ @ VGS=10V （Typ：38mΩ）.

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Datasheet Details

Part number PE6005
Manufacturer semi one
File Size 223.10 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE6005 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Power MOSFET Description The PE6005 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =5A RDS(ON) < 45mΩ @ VGS=10V （Typ：38mΩ） Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply PE6005 D G S Schematic diagram SOT-223-3L view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit 60 ±20 5 3.