Datasheet4U Logo Datasheet4U.com

PMZB390UNE - N-channel MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Very fast switching.
  • Low threshold voltage.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection: 2 kV HBM.
  • Ultra thin package profile of 0.37 mm 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMZB390UNE N-channel Trench MOSFET NXP
PMZB300XN single N-channel Trench MOSFET NXP Semiconductors
PMZB320UPE P-channel Trench MOSFET NXP
PMZB350UPE single P-channel Trench MOSFET NXP Semiconductors
PMZB370UNE MOSFET NXP Semiconductors

Other Datasheets by Nexperia

Part Number Description
PMZB320UPE P-channel MOSFET
PMZB350UPE P-channel MOSFET
PMZB370UNE N-channel MOSFET
PMZB1200UPE P-channel MOSFET
PMZB150UNE N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PMZB390UNE 30 V, N-channel Trench MOSFET 12 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Low threshold voltage • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection: 2 kV HBM • Ultra thin package profile of 0.37 mm 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1.