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PMZB370UNE
30 V, single N-channel Trench MOSFET
Rev. 1 — 8 May 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching Trench MOSFET technology Low threshold voltage
Ultra thin package profile with 0.37 mm height
ESD protection up to 2 kV
1.3 Applications
Relay driver High-speed line driver
Low-side loadswitch Switching circuits
1.4 Quick reference data
Table 1.
PMZB370UNE Datasheet
