Datasheet4U Logo Datasheet4U.com

PMPB29XPEA - P-channel MOSFET

General Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Low threshold voltage.
  • Trench MOSFET technology.
  • Side wettable flanks for optical solder inspection.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2).
  • AEC-Q101 qualified 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMPB29XPE single P-channel Trench MOSFET NXP
PMPB29XNE single N-channel Trench MOSFET NXP
PMPB20EN 30V N-channel Trench MOSFET NXP
PMPB20UN single N-channel Trench MOSFET NXP Semiconductors
PMPB20XPE single P-channel Trench MOSFET NXP

Other Datasheets by Nexperia

Part Number Description
PMPB29XPE P-channel MOSFET
PMPB29XNE N-channel MOSFET
PMPB29XNEA N-channel MOSFET
PMPB20EN N-channel MOSFET
PMPB20SNA N-channel Trench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PMPB29XPEA 20 V, P-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Trench MOSFET technology • Side wettable flanks for optical solder inspection • ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • High-side load switch • Switching circuits 4. Quick reference data Table 1.