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PMPB20XNEA Datasheet Preview

PMPB20XNEA Datasheet

N-channel MOSFET

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PMPB20XNEA
20 V, N-channel Trench MOSFET
22 February 2016
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
2. Features and benefits
Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
3. Applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 7.5 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-12 -
12 V
[1] - - 7.5 A
- 16 20 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad
for drain 6 cm2.




nexperia

PMPB20XNEA Datasheet Preview

PMPB20XNEA Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
PMPB20XNEA
20 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 D drain
2 D drain
3 G gate
4 S source
5 D drain
6 D drain
7 D drain
8 S source
Simplified outline
Graphic symbol
16
7
25
384
Transparent top view
DFN2020MD-6 (SOT1220)
G
D
S
017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
PMPB20XNEA
DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin
small outline package; no leads; 6 terminals
Version
SOT1220
7. Marking
Table 4. Marking codes
Type number
PMPB20XNEA
Marking code
3J
PMPB20XNEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 February 2016
© Nexperia B.V. 2017. All rights reserved
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Part Number PMPB20XNEA
Description N-channel MOSFET
Maker nexperia
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