PBSS4350SS
PBSS4350SS is NPN/NPN transistor manufactured by Nexperia.
description
NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number Package
Nexperia PBSS4350SS SOT96-1
Name SO8
NPN/PNP plement
PBSS4350SPN
PNP/PNP plement
PBSS5350SS
1.2 Features
I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (h FE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I Dual low power switches (e.g. motors, fans) I Automotive
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per transistor
VCEO IC ICM collector-emitter voltage collector current peak collector current
RCEsat collector-emitter saturation resistance
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Conditions open base single pulse; tp ≤ 1 ms IC = 2 A; IB = 200 m A
Min Typ Max
Unit
- - 50 V
- - 2.7 A
--5
[1]
- 90 130 mΩ
Nexperia
50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor
2. Pinning information
Table 3. Pin 1 2 3 4 5 6 7 8
Pinning Description emitter TR1 base TR1 emitter TR2 base TR2 collector TR2 collector TR2 collector TR1 collector TR1
Simplified outline Symbol
8 5 8765
TR1 TR2
1 4 1234 006aaa966
3. Ordering...
