PBSS4350T Datasheet (NXP) - NPN transistor

PBSS4350T, NPN transistor

NPN low VCEsat transistor in a SOT23 plastic package.

PNP complement: PBSS5350T.

MARKING TYPE NUMBER PBSS4350T MARKING CODE(1) ZC * Note 1.

* = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICRP collector-em

PBSS4350T Features

* Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat

* High collector current capability

* High collector current gain

* Improved efficiency due to reduced heat generation. APPLICATIONS

* Power management applications

* Low a