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PBSS4350T - NPN transistor

NXP

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Datasheet Details

Part number	PBSS4350T
Manufacturer	NXP
File Size	93.94 KB
Description	NPN transistor
Datasheet	PBSS4350T_PhilipsSemiconductors.pdf

PBSS4350T Product details

Description

NPN low VCEsat transistor in a SOT23 plastic package. Note 1. = p: Made in Hong Kong. = t: Made in Malaysia. = W: Made in China.

Features

Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat.
High collector current capability.
High collector current gain.
Improved efficiency due to reduced heat generation.

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Published: Nov 22, 2006 |