PBSS4350SPN - 2.7A NPN/PNP Low VCEsat (BISS) Transistor

Datasheet Details

Part number	PBSS4350SPN
Manufacturer	NXP
File Size	178.39 KB
Description	2.7A NPN/PNP Low VCEsat (BISS) Transistor
Datasheet	PBSS4350SPN_PhilipsSemiconductors.pdf

NPN/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.

I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efﬁciency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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Published: May 26, 2009 |