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PBSS4350SS - transistor

NXP

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Datasheet Details

Part number	PBSS4350SS
Manufacturer	NXP
File Size	89.88 KB
Description	transistor
Datasheet	PBSS4350SS-NXP.pdf

PBSS4350SS Product details

Description

NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.

Features

I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efﬁciency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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Published: Jan 30, 2016 |