PBSS4350SPN datasheet, transistor equivalent, nexperia

Features and benefits

I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efﬁciency due to le.

Application

I Complementary MOSFET driver I Half and full bridge motor drivers I Dual low power switches (e.g. motors, fans) I Autom.

Description

NPN/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia PBSS4350SPN SOT96-1 Name SO8 NPN/NPN complement PBSS435.

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