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BUK7V4R2-40H
Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in
LFPAK56D (half-bridge configuration)
9 May 2023
Product data sheet
1. General description
Dual, standard level N-channel MOSFET in an LFPAK56D package
(half-bridge configuration), using Trench 9 TrenchMOS technology. This
product has been designed and qualified to AEC-Q101.
G1
An internal connection is made between the source (S1) of the high-
side FET to the drain (D2) of the low-side FET, making the device ideal
to use as a half-bridge switch in high-performance automotive PWM
G2
applications.
D1
S1, D2
S2
aaa-028081
2.