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BUK7V4R2-40H - Dual N-channel MOSFET

Datasheet Summary

Description

(half-bridge configuration), using Trench 9 TrenchMOS technology.

product has been designed and qualified to AEC-Q101.

Features

  • LFPAK56D package with half-bridge configuration enables:.
  • Reduced PCB layout complexity.
  • PCB shrinkage through reduced component footprint for 3-phase motor drive.
  • Improved system level Rth(j-amb) due to optimized package design.
  • Lower parasitic inductance to support higher efficiency.
  • Footprint compatibility with LFPAK56D Dual package.
  • Advanced AEC-Q101 grade Trench 9 silicon technology:.
  • Low power losses, high power densi.

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Datasheet Details

Part number BUK7V4R2-40H
Manufacturer nexperia
File Size 306.28 KB
Description Dual N-channel MOSFET
Datasheet download datasheet BUK7V4R2-40H Datasheet
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BUK7V4R2-40H Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) 9 May 2023 Product data sheet 1. General description Dual, standard level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101. G1 An internal connection is made between the source (S1) of the high- side FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in high-performance automotive PWM G2 applications. D1 S1, D2 S2 aaa-028081 2.
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