BUK7506-55A
description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
- AEC Q101 pliant
- Low conduction losses due to low on-state resistance
- Suitable for standard level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
- 12 V and 24 V loads
- Automotive and general purpose power switching
- Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C voltage
ID drain current
VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3
Ptot total power
Tmb = 25 °C; see Figure 2 dissipation
Static characteristics
RDSon drain-source on-state resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 12; see Figure...
