BUK724R5-30C
description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications.
1.2 Features and benefits
- AEC Q101 pliant
- Avalanche robust
- Suitable for standard level gate drive
- Suitable for thermally demanding environment up to 175°C rating
1.3 Applications
- 12V Motor, lamp and solenoid loads
- High performance automotive power systems
- High performance Pulse Width Modulation (PWM) applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C voltage
ID drain current
VGS =10 V; Tj = 25 °C; see Figure 1
Ptot total power
Tmb = 25 °C; see Figure 2 dissipation
Static characteristics
RDSon drain-source on-state resistance
VGS =10 V; ID = 25 A; Tj =25 °C; see Figure 12; see Figure...
