BUK755R4-100E
description
Standard level N-channel MOSFET in a SOT78 package using Trench MOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits
- AEC Q101 pliant
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175 °C rating
- True standard level gate with VGS(th) rating of greater than 1V at 175 °C
1.3 Applications
- 12V, 24V and 48V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25...
